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Metallization of AIN Through Reactive Wetting--Ceramic Composites, Inc., 1110 Benfield Boulevard, Millersville, MD  21108-2540; 410-224-3710

Mr. David McQuiston, Principal Investigator

Mrs. Sharon S. Fehrenbacher, Business Official

DOE Grant No. DE-FG02-00ER82972

Amount:  $99,886

 

Despite these outstanding properties and over a decade of research and development aluminum nitride has achieved only limited penetration into the electronic packaging market.  The initial difficulties of low yield manufacturing and costly raw materials have been largely overcome but the problem of economical, reproducible and reliable metallization remain.  A novel method for metallization of AlN.  This method will produce direct bonding of aluminum to the surface of AlN substrates for use in high power electronics through reactive wetting.  This reactive wetting will be achieved through modification of the AlN surface through a solid state reaction.  On subsequent contact with molten aluminum, the surface and aluminum react and spreading occurs over the modified surface forming a direct chemical bond with the AlN substrate.  The work plan proposes to develop a process for fine line metallization for high power electronic packaging.

 

Commercial Applications and Other Benefits as described by the awardee:  This innovative, inexpensive and robust method of producing direct bonded metallization being proposed will enable the utilization of AlN packaging for industrial control and energy saving electric transportation vehicles such as hybrid and electric autos and high speed trains.  The resulting in greater efficiency and sophistication of the control electronics for these systems