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The Development and Demonstration of Reliable Adherent Metallization of Aluminum Nitride--MER Corporation, 7960 South Kolb Road, Tucson, AZ  85706; 520-574-1980

Dr. J. C. Withers, Principal Investigator

Dr. R. O. Loutfy, Business Official

DOE Grant No. DE-FG03-00ER83043

Amount:  $100,000

 

The substitution of AlN for beryllia to eliminate the adverse environmental and health impacts of beryllia is presently hampered by a lack of suitable techniques for metallizing AlN required for substituting beryllia in microelectronics, high-power microwave tubes, heat sinks, etc.  Non-oxide ceramics such as AlN present a significant challenge for traditional metallization approaches used for conventional oxides.  Metal ion implantation into the AlN substrate with a transition to a controlled microstructure metal coating can provide a low cost reliable process to apply adherent metal coatings to AlN for substituting beryllia.  Pulsed ion beam systems to implant metals into the AlN surface with a transition to a controlled microstructure will be demonstrated, including the transition to select metal topcoats for secondary operations including brazing, producing circuit elements and heat sinks will also be demonstrated.

 

Commercial Applications and Other Benefits as described by the awardee:  Reliable, low cost, adherent metallized AlN can substitute in all places for beryllia as well as significantly expand all applications in thick film substrates, heat sinks, microwave tubes, diode mounts, etc.