53
Development
of Ion Beam Techniques for Layer Splitting of Oxide Materials--UES,
Inc., 4401 Dayton-Xenia Road, Dayton, OH
45432-1805; 937-426-6900
Dr.
Rabi S. Bhattacharya, Principal Investigator, rbhattacharya@ues.com
Mr.
Francis F. Williams, Jr., Business Official, fwilliam@ues.com
DOE
Grant No. DE-FG02-02ER83562
Amount:
$99,982
Micro-
and optoelectronics, and micro-electro-mechanical systems (MEMS) integration
often requires placing thin layers of different materials on a substrate or
self-supporting thin layer. This
cannot always be achieved by standard thin film deposition processes such as
sputtering or pulsed laser deposition because of limitations due to lattice
mismatch, interdiffusion, and/or interfacial chemical reaction.
This project will develop ion beam techniques for layer splitting and
transfer onto a desired substrate for device applications. The mechanisms
responsible for crack propagation and for the evolution of etch selectivity in
radiation-damaged metal oxides will be elucidated. Two model ferroelectric
systems, LiNbO3 and PbZn1/3Nb2/3O3
– PbTiO3 (PZN-PT), will be used in Phase I.
A Tandetron accelerator will be used for the ion implantations of various
light ions at different doses and substrate temperatures.
The mechanism responsible for layer separation will be elucidated by
using infrared spectroscopy, cross-sectional transmission electron microscopy,
optical microscopy, and atomic force microscopy.
Commercial
Applications and Other Benefits as
described by the awardee: Applications
of the ion beam technique for layer splitting are anticipated in the fields of
MEMS, micro- and optoelectronics, and lab-on-a-chip.