14
Pressure
Sensor Electronics for High Temperature Drilling--SVT
Associates, 7620 Executive Drive, Eden Prairie, MN
55344-3677; 952-934-2100, www.svta.com
Dr.
Amir Dbiran, Principal Investigator,
Ms.
Jane Marks, Business Official,
DOE
Grant No. DE-FG02-02ER83549
Amount:
$549,936
This
project will demonstrate and produce a greatly improved monolithic differential
amplifier and switch, based on AlGaN/GaN High Electron Mobility Transistors
(HEMTs) and passive components, that will be capable of operating in the
high-temperature oil drilling environment. The
GaN-based amplifier will have reduced temperature sensitivity at temperatures up
to 400oC. The amplifier
will utilize passive devices, such as resistors and capacitors, as well as
active devices such as HEMT transistors with improved characteristics.
Phase I improved the MBE growth of AlGaN/GaN high electron mobility
transistors. High-temperature and
high-pressure tests on GaN-based electronic components, including HEMTs and
resistors, were performed. The
feasibility of employing GaN-based electronics for the construction of
high-temperature integrated circuits, such as onboard electronics used in
geothermal well drilling and monitoring applications, was demonstrated.
Phase II will demonstrate and produce a wide bandgap monolithic
instrumentation amplifier and switching circuits that can be used in geothermal
drilling and monitoring applications.
Commercial Applications and Other
Benefits
as described by awardee: The
high-temperature electronics should have application not only to geothermal and
oil drilling but also to avionics, industrial process control, nuclear reactor
monitoring, boiler combustion control systems, automotive underhood electronics,
and space-based power systems.