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High Gain, Fast Scan, Broad Spectrum, Parallel Beam Wavelength Dispersive X-Ray Spectrometer for SEM--Parallax Research, Inc., P.O. Box 12212, Tallahassee, FL  32317-2212; 850-580-5481, www.parallax-x-ray.com
Mr. David Ohara, Principal Investigator,
prlax@mindspring.com  
Mr. David Ohara, Business Official,
prlax@mindspring.com  
DOE Grant No. DE-FG02-02ER83545
Amount:  $547,624
 

This project will develop technology for a new type of x-ray spectrometer, suitable for Scanning Electron Microscopes (SEM) used in materials science research, that combines the ease of use of Energy Dispersive Spectrometers (EDS) with the energy resolution and Peak-to-Background (P/B) of Wavelength Dispersive Spectrometers (WDS).  The system would scan very rapidly, produce very high count rates at low electron beam currents, have very good P/B, have 5-20 eV resolution, have the ability to employ “Intelligent Scanning” strategies, and fit on most ports of SEMs.  A key requirement for this system is the development of x-ray collimation optics to allow extension to sufficiently high energy.  Along with the new collimation optics, the mechanism and software for a Parallel Beam Wavelength Dispersive Spectrometer also will be developed.  Phase I developed software to enable the design of the Phase II collimation optics.  A new diffractor, which will be used in Phase II, was investigated and found to produce high count rates for higher x-ray energies.  An interim optic to test the fabrication techniques of Phase II was produced and tested.  Phase II will produce and test the new extended range collimation optics, fabricate a new fast scanning spectrometer, develop “Intelligent Scanning” software and new diffractor technology for the spectrometer, and produce new x-ray detector technology.  

Commercial Applications and Other Benefits as described by awardee:  Potential applications include any elemental analysis where spatial resolution less than 100 microns is desired, e.g., detection of impurities in a plutonium matrix by a national lab, analysis of micro-paint and-glass samples by crime labs, analysis of small samples by an art institute, analysis of geological samples by a geophysical institute, measurement of the thickness of layers on silicon wafers, automated analysis of semiconductor defects, metallurgical analysis, analysis of MEMS parts, and  optical coating analysis.