7
Al(In)GaN-Based High Electron Mobility Transistors
on SiC for High Power Radar Applications--SVT Associates, 7620 Executive
Drive, Eden Prairie, MN 55344-3677;
952-934-2100, www.svta.com
Dr. Amir Dabiran, Principal Investigator,
Mr. Scott J. Vandal, Business Official,
vandal@svta.com
DOE Grant No. DE-FG02-03ER83790
Amount: $742,674
Substantial improvements in
high-power performance are predicted for high-frequency Al(In)GaN-based High
Electron Mobility Transistors (HEMTs) on SiC substrates.
This project will utilize modified molecular beam epitaxy (MBE) growth
techniques and develop microelectronics processes for the fabrication of
high-power (In)AlGaN/(In)GaN HEMTs. Expected
performance parameters include: current density greater than 1.2A/mm, extrinsic
transconductance values greater than 400 mS/mm, fT greater than 200 GHz, and
power density greater than 8 W/mm at 40 GHz.
Phase I optimized the MBE growth of (In)AlGaN/(In)GaN heterostructures on
SiC substrates, developed microelectronic processes for the fabrication of
high-power and high-frequency InAlGaN-based HEMTs, and measured the dc and rf
performance of InAlGaN-based HEMTs. Phase
II will: (1) perform device modeling
to determine optimal device structures for InAlGaN-based HEMTs; (2) utilize
modified MBE growth techniques to grow high quality In-contaning films and
structures; (3) optimize device processing and demonstrate substantial
improvements in device performance of InAlGaN-based HEMTs; and (4) improve device uniformity and yield on 2-inch and 3-inch SiC wafers.
Commercial Applications and Other Benefits as described by the awardee: Improved AlInGaN-based power HEMTs should have numerous civilian and defense applications including radar tracking, cellular base stations, telemetry, and satellite communications.